Tuning anomalous Hall effect in perpendicular multilayers with different oxygen environment by interfacial ionic migration
Source abstract
Abstract
Abstract Interfacial oxygen migration and its induced anomalous Hall effect are reported in perpendicular multilayers with different interfacial oxygen-coordinated. Saturation Hall resistance RAH for Pt/Co/MgO/Pt and Pt/Co/Al2O3/Pt multilayers is 3.66 Ω and 4.34 Ω in as-deposited state, respectively. After annealing at 400 °C, RAH value reaches 4.82 Ω and 6.67 Ω, which is 32% and 54% larger than that in as-deposited samples, respectively. Especially, the increment value ΔRAH in Pt/Co/Al2O3/Pt multilayers is 101% larger than that in Pt/Co/MgO/Pt film. Interfacial structural analysis shows such differentΔRAH in two samples originates from distinct oxygen migration behavior induced different interfacial oxygen-coordinated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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