Zn3N2 compensated ZnTe films and ZnTe–ZnSe superlattices grown by hot wall epitaxy
Source abstract
Abstract
Abstract Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe–ZnSe superlattices (SLs) were prepared on GaAs (1 0 0) substrates by hot wall epitaxy (HWE) using NH 3 gas and Zn 3 N 2 as a codoping source. We have investigated the compensation effect of Zn 3 N 2 and optimized the growth conditions. Then the nitrogen-doped ZnTe films and ZnTe–ZnSe superlattices of high crystal quality with a high hole concentration were obtained.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties
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References (12)
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