Kinetically controlled growth of gallium on stepped Si (553) surface

Abstract Kinetically controlled growth of gallium (Ga) metal has been reported on high index stepped Si (553) surface and its thermal stability with various novel superstructural phases has been analyzed. Auger electron spectroscopy studies revealed that the adsorption of Ga at room temperature (RT) follows Frank–van der Merwe (FM) growth mode while for higher substrate temperature, Ga adsorption remains within the submonolayer range. Thermal desorption and low energy electron diffraction studies investigated the formation of thermally stable Ga-islands and the various Ga induced superstructural phase on Si (553). During room temperature adsorption, (1 1 1)7 × 7 facet of Si (553) reconstructed into (1 1 1)6 × 6 facet while during desorption process, stable (1 1 1)6 × 6 and (1 1 1)√3 × √3-R30° surface reconstructions has been observed.