Vertical 100 nm Si-p channel JFET grown by selective epitaxy
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OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
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References (4)
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1. F. Hofmann, H. Schäfer, T. Vogelsang and L. Risch, in: Proc. ESSDERC'94, Edinburgh, pp. 489–492.
2. W. Langen, H. Hardtdegen, H. Lüth and P. Kordos, in: Proc. 21 ICSI 94, Inst. Phys. Conf. Ser. No. 141, Compound Semiconductors, pp. 183–188.
3. W. Langen, T.M. Raafat, H. Hardtdegen, A. v.d. Hart, F. Meyer, H. Lüth and P. Kordos, in: Proc. ESSDERC'94, Edinburgh, pp. 635–638.
4. Vescan · Mater. Sci. Eng. B · 1994 · 28 · 110.1016/0921-5107(94)90004-3 ↗