Characteristics of electron traps in rapidly thermal annealed GaAs using a capping proximity technique
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
Show source-provided references
1. Sedgwick · J. Electrochem. Soc. Solid State Sci. Technol. · 1983 · 130 · 484
2. Sukhdev · J. Electrochem. Soc. Solid State Sci. Technol. · 1986 · 133 · 2590
3. Narayan · J. Appl. Phys. · 1984 · 56 · 291310.1063/1.333831 ↗
4. Kuzuhara · J. Appl. Phys. · 1986 · 59 · 313110.1063/1.336891 ↗
5. Katayama · J. Appl. Phys. · 1987 · 62 · 52810.1063/1.339778 ↗
6. Street · 1985 · Vol. 46 · 333
7. Kuzuhara · 1984 · Vol. 23 · 651
8. Proc. MRS conf. Symp. E
9. Kitagawa · J. Appl. Phys. · 1988 · 63 · 41410.1063/1.340255 ↗
10. Thèse de Doctorat
11. Von Bardelben · Phys. Rev. B · 1986 · 34 · 719210.1103/PhysRevB.34.7192 ↗
12. Marrakchi · J. Appl. Phys. · 1987 · 62 · 274210.1063/1.339401 ↗