Angle-dependent sputter yield of rippled surfaces
Source abstract
Abstract
Abstract Atomistic (binary-collision) simulation is used to study the sputter yield of rippled C and Si surfaces bombarded with Ar and Ga ions in a wide range of incidence angles and energies. This study was motivated by conflicting theoretical predictions of results when the ion energy is varied. Most simulations refer to a sinusoidal ripple topography with h/λ = 0.05–0.15, where h and λ are the amplitude and wavelength of ripples, respectively. Results are compared with Monte Carlo simulation based on Sigmund’s continuum model of ion sputtering and not tied to a specific ion-target combination. Both types of simulation do not confirm a strong suppression of the angular variation in the sputter yield from rippled surfaces with increasing ion energy, predicted theoretically (Makeev and Barabasi, 2004).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Metal and Thin Film Mechanics · Nuclear Materials and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
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