Identification of 6H-SiC polar faces with pull-off force of atomic force microscopy

Abstract Distinguishing SiC (0001) Si-face from SiC (000-1) C-face without any damages is extremely important because the two polar faces have different physical and chemical properties which seriously influence the quality of a homoepitaxy or heteroepitaxy thin film on it. Here, a convenient and nondestructive detection method is developed to distinguish the Si-face and C-face of a (0001) oriented SiC wafer by employing a pull-off force measurement using atomic force microscopy. It is found that the pull-off force from a Si-face of 6H-SiC is about two times of that from a C-face, no matter it is a two-face chemical mechanical polishing or etched 6H-SiC wafer. The method developed here is suitable to identify polar faces of materials only if the two polar faces having different surface energy.