journal article·1996-11

A new CVD reaction for atomic layer deposition of silicon

C.-M. Chiang, J.E. Rowe, R.A. Malic, A. Sen, M.L. Steigerwald, A.P. Mills

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Catalytic Processes in Materials Science · Electron and X-Ray Spectroscopy Techniques

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References (12)

Show source-provided references
1. 1990
2. Takahashi · Jpn. J. Appl. Phys. · 1991 · 30 · L20910.1143/JJAP.30.L209 ↗
3. Nishizawa · J. Cryst. Growth · 1990 · 99 · 50210.1016/0022-0248(90)90571-2 ↗
4. Lubben · J. Vac. Sci. Technol. A · 1991 · 9 · 300310.1116/1.577164 ↗
5. Yarmoff · J. Vac. Sci. Technol. A · 1992 · 10 · 32410.1116/1.577935 ↗
6. Koleske · Appl. Phys. Lett. · 1992 · 61 · 180210.1063/1.108405 ↗
7. Wozniak · 1993
8. Zegarski · Surf. Sci. · 1992 · 262 · L12910.1016/0039-6028(92)90121-L ↗
9. Lowry · 1987
10. Shimanouchi · 1972 · Vol. I
11. Gordon · 1972 · 202
12. Emsley · 1989