Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

Abstract In this article, the authors developed a high- k HoTiO 3 gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO 3 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO 3 structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.