Hydrostatic pressure effects on the impurity states in InAs/GaAs coupled quantum dots

Abstract Within the framework of effective-mass approximation, the effects of the hydrostatic pressure on the binding energy of a hydrogenic impurity in InAs/GaAs coupled quantum dots (QDs) are investigated. Numerical results show the donor binding energy is largest when the impurity is located at the dot center than at other positions for any pressure value. Moreover, for the impurity located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.