Synchrotron radiation assistant MOCVD deposition of ZnO films on Si substrate
Source abstract
Abstract
Abstract The growth of ZnO film on Si(1 0 0) substrate has been studied with synchrotron radiation (SR) assisted MOCVD method. The diethylzinc (DEZn) and CO 2 are used as source materials, while Nitrogen is employed as a carrier gas for DEZn. With the assistance of SR the ZnO film can be deposited even at room temperature. XRD, SEM and photoluminescence (PL) studies show that the crystal quality of ZnO films grown with the assistance of SR is higher than that of those without SR assistance. The growth mechanism of ZnO film with the SR assistant MOCVD system is primarily discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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