Growth of SiO2 on InP substrate by liquid phase deposition

Abstract We have grown silicon dioxide (SiO 2 ) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2 SiF 6 ), 0.1 M boric acid (H 3 BO 3 ) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 A/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2 O 2 ) that can regulate the concentration of OH − ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2 SiF 6 in treatment solution.