Photo-assisted MOCVD of copper using Cu(hfa)(COD) as precursor
Source abstract
Abstract
Abstract Cu thin films were deposited in the temperature range 100–180°C using the title precursor by photo-MOCVD. The ultraviolet (UV) photons facilitate a clean removal of the ligands. Consequently, the growth rate is slightly increased under irradiation and the morphology and the film resistivity is improved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Semiconductor materials and devices · Copper Interconnects and Reliability
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References (16)
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