journal article·2013-12

Fabrication of Schottky barrier diodes using H2O2-treated non-polar ZnO 1 0 1 ¯0 substrates

Yasuhiro Kashiwaba, Mio Sakuma, Takami Abe, Akira Nakagawa, Ikuo Niikura, Yasube Kashiwaba, Masahiro Daibo, Hiroshi Osada

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OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials

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References (31)

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29. 1968 · III
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