journal article·2004-10

Adsorption of thiophene on a Si(0 0 1)-2 × 1 surface studied by photoelectron spectroscopy and diffraction

M. Shimomura, Y. Ikejima, K. Yajima, T. Yagi, T. Goto, R. Gunnella, T. Abukawa, Y. Fukuda, S. Kono

Applied Surface Science· Volume 237· Issue 1-4
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Abstract

Chemisorption of thiophene on a Si(0 0 1) surface has been studied by synchrotron radiation induced photoelectron spectroscopy (SRPES). Two adsorption-related components in Si 2p and S 2p spectra are observed after exposure of thiophene. It is suggested that the two components of Si 2p are ascribed to silicon bonded to hydrocarbon and sulfur. The core-level shift resolved photoelectron diffraction (PED) result indicates that the low-kinetic-energy component of S 2p can be ascribed to 2,5-dihydrothiophehe (DHT)-like species. Another S 2p component could be assigned to dissociated sulfur based on the results of PED and time evolution of the spectrum under irradiation. These assignments are consistent with the core-level shift of S 2p.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Advanced Chemical Physics Studies · Molecular Junctions and Nanostructures

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