Evaluation of the barrier capability of Zr–Si films with different substrate temperature for Cu metallization

Abstract Barrier capability of Zr–Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr–Si diffusion barriers were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. An increase in substrate temperature results in a slightly decreased deposition rate together with an increase in mass density. An increase in substrate temperature also results in grain growth as deduced from field emission scanning electron microscopy (FE-SEM) micrographs. X-ray diffraction (XRD) spectra and Auger electron spectroscopy (AES) depth profiles for Cu/Zr–Si(RT)/Si and Cu/Zr–Si(300 °C)/Si samples subjected to anneal at various temperatures show that the thermal stability was strongly correlated with the deposition temperature (consequently different density and chemical composition etc.) of the Zr–Si barrier layers. ZrSi(300 °C) with higher mass density make the Cu/Zr–Si(300 °C)/Si sample more stable. The appearance of Cu 3 Si in the Cu/Zr–Si/Si sample is attributed to the failure mechanism which may be associated with the diffusion of Cu and Si via the grain boundaries of the Zr–Si barriers.