journal article·2006-07

High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions

Satoshi Ninomiya, Takaaki Aoki, Toshio Seki, Jiro Matsuo

Applied Surface Science· Volume 252· Issue 19
Publisher page

Abstract

Abstract Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Sin+ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size.
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Research context

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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