In situ oxidation of ultrathin layers of Ge on Si(001): evidence for bonding partner exchange
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
Show source-provided references
1. Iyer · IEEE Trans. Electron Devices · 1989 · 36 · 204310.1109/16.40887 ↗
2. People · IEEE J. Quantum Electron. · 1986 · 22 · 169610.1109/JQE.1986.1073152 ↗
3. Park · Appl. Phys. Lett. · 1989 · 54 · 156410.1063/1.101314 ↗
4. LeGoues · Appl. Phys. Lett. · 1989 · 54 · 64410.1063/1.100905 ↗
5. Fathy · Appl. Phys. Lett. · 1987 · 51 · 133710.1063/1.98671 ↗
6. Nayak · Appl. Phys. Lett. · 1990 · 56 · 6610.1063/1.102653 ↗
7. Liou · Appl. Phys. Lett. · 1991 · 59 · 120010.1063/1.105502 ↗
8. Patton · 1988 · 102 · 295
9. van der Veen · Surf. Sci. Rep. · 1985 · 5 · 19910.1016/0167-5729(85)90001-9 ↗
10. K. Prabhakaran and T. Ogino, to be published.
11. Prabhakaran · Surf. Sci. · 1993 · 290 · 23910.1016/0039-6028(93)90707-Q ↗
12. Prabhakaran · Appl. Phys. Lett. · 1993 · 62 · 86410.1063/1.108548 ↗
13. 1989 · B
14. K. Prabhakaran, T. Scimeca, T. Ogino, Y. Watanabe and M. Oshima, to be published.
15. LeGoues · J. Appl. Phys. · 1989 · 65 · 172410.1063/1.342945 ↗
16. Baikie · 1991 · 204 · 363