Resonance enhanced multi-photon ionization of neutral atoms sputtered with Ga-FIB

Abstract Resonance enhanced multi-photon ionization (REMPI) of neutral aluminum atoms sputtered with gallium focused ion beam (Ga-FIB) was studied in terms of substrate temperature and chemical state of the surfaces. Aluminum has the lowest excitation state (3p 2P3/2) at 112 cm−1 above the ground state (3p 2P1/2). The results showed that the total REMPI signal intensity of neutral aluminum atoms and the ratio of REMPI signal intensities attributed to 2P1/2 to 2P3/2 were increased at higher temperature. On the other hand, the REMPI signal and the ratio were decreased in the case of partially oxidized aluminum surfaces. Considering the result on Al2O3, it was confirmed that the REMPI signals of ground state 2P1/2 and the first excited spate 2P1/2 could be affected with surface oxidation state.