Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

Abstract GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current–voltage ( I – V ) and capacitance–voltage ( C – V ) techniques by the way of Al/GaAs Shottky junctions. The electric analysis allowed us to determine the n factor and the barrier height Ф b0 parameters of Al/GaAs Schottky junctions. The ( C – V ) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.