Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition
Source abstract
Abstract
Abstract In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Epitaxial and polycrystalline growth of AlN by high temperature CVD: experimental results and simulation10.1016/j.surfcoat.2010.08.049 ↗
2. In situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth10.1016/S0925-3467(03)00048-X ↗
3. Structural characterization of AlN films synthesized by pulsed laser deposition10.1016/j.apsusc.2010.10.043 ↗
4. Influence of deposition conditions on optical properties of aluminum nitride (AlN) thin films prepared by DC-reactive magnetron sputtering10.1016/S0167-577X(02)01106-0 ↗
5. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system10.1016/j.apsusc.2004.01.039 ↗
6. Effect of ion beam energy on the synthesis of oriented aluminium nitride thin films10.1016/0257-8972(95)02526-X ↗
7. Deposition characteristics of AlN thin film prepared by the dual ion beam sputtering system10.1007/s11664-006-0023-2 ↗
8. The characterization of aluminum nitride thin films prepared by dual ion beam sputtering10.1016/j.surfcoat.2005.07.046 ↗
9. Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition10.1116/1.582386 ↗
10. Electrical properties of AlN thin films prepared by ion beam enhanced deposition10.1016/j.surfcoat.2004.08.169 ↗
11. Dielectric properties of AlN thin films formed by ion beam enhanced deposition10.1016/S0167-577X(03)00377-X ↗
12. Investigation of D.C.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection10.1016/S0257-8972(98)00527-1 ↗
13. XPS investigation of AlN formation in aluminum alloys using plasma source ion implantation10.1016/S0257-8972(98)00397-1 ↗
14. Moulder · 1992
15. Preparation of AlN thin films by nitridation of Al-coated Si substrate10.1016/S0040-6090(98)01373-X ↗
16. Chemical structure of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study10.1016/S0257-8972(99)00377-1 ↗
17. Fabrication of SOI structure with AlN film as buried insulator by ion-cut process10.1016/S0169-4332(02)00864-4 ↗
18. AlN formation by direct nitrogen implantation using a DECR plasma10.1016/S0257-8972(99)00558-7 ↗
19. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: nitridation mechanism10.1063/1.1618357 ↗
20. Aluminium–aluminium nitride cermet films: preparation by co-sputtering and microstructure10.1016/S0257-8972(97)00527-6 ↗
21. Compositional and morphological study of reactive ion beam deposited AlN thin films10.1016/S0168-583X(00)00023-9 ↗
22. Design and fabrication of highly thermally stable HfMoN/HfON/Al2O3 tandem absorber for solar thermal power generation applications10.1016/j.solmat.2012.03.021 ↗
23. The optical properties of sputtered composite of Al-AlN10.1016/j.solmat.2005.11.006 ↗
24. The influence of various sputtering parameters on structural, wettability and optical properties of Zr2ON2thin films10.1016/j.mseb.2013.11.003 ↗