Graphene preparation by annealing of Co/SiC structure
Source abstract
Abstract
Abstract This work is focused on graphene preparation using the segregation method with Co/SiC structure, the method being a viable low temperature synthesis approach. The graphene preparation was carried out with the cobalt layer of 300 nm thickness; the technological process is based on an optimization of parameters (temperature and duration) of annealing which is a crucial step of the synthesis. 850 °C as an annealing temperature and 10 s as an annealing duration have been found to be the most optimal. The prepared graphene is close to the bi-layer graphene structure with its parameters. Structural parameters of the prepared graphene were determined from spectra obtained by Raman spectroscopy.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Graphene and Nanomaterials Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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