Ti–N, Ti–C–N, Ti–Si–N coatings obtained by APCVD at 650–800 °C

Abstract Ti–N, Ti–C–N, and Ti–Si–N coating systems obtained by atmospheric pressure chemical vapor deposition (APCVD) with TiCl 4 , C 2 H 2 or SiCl 4 , and NH 3 as reactants have been examined at 650–800 °C in this study. Low pressure CVD (LPCVD) has been applied for deposition by the TiCl 4 –NH 3 system instead of APCVD. The C 2 H 2 addition to Ti–N did not change the growth rate, coating composition, crystal structure, and hardness, but only changed its microstructure. The SiCl 4 addition showed a strong effect on the Ti–N properties. The SiCl 4 addition obviously enhanced growth rate, changed crystal structure, incorporated Si into coatings, increased the hardness, and severely decreased the grain size to a nano-scale.