Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Abstract Effect of Ar plasma on the quality of atomic layer-by-layer Si epitaxial growth on Si(1 0 0) is investigated using the electron-cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. Adsorbed SiH4 molecules on monohydride Si(1 0 0) are effectively decomposed and form Si epitaxial film under the Ar plasma irradiation with the maximum and peak ion energies of 7 and 1–2 eV, respectively. As a result, atomic layer-by-layer control of Si epitaxial growth at a lower temperature below 100 °C is achieved by alternate exposure of Si(1 0 0) to SiH4 and Ar plasma. The plasma exposure also induces Ar incorporation in the film, and it is suggested that lowering the incorporated Ar amount below 2×1021 cm−3 is necessary to avoid degradation in crystallinity.