journal article·2009-04

First-principles study of manganese adsorption on Si(100) surface

Anlong Kuang, Hongkuan Yuan, Hong Chen

Applied Surface Science· Volume 255· Issue 13-14
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Abstract

Abstract Detailed first-principles calculations have been performed on adsorption of closely spaced rows of Mn atoms on Si(1 0 0) ( 2 × 1 ) . The optimized geometries and adsorption energies have been obtained. For adsorption of a single Mn atom on Si(1 0 0), binding at the subsurface site below the Si surface dimmer is the most stable adsorption site. For two Mn atoms adsorption models, we found that the h and i sites are the energetically most favorable structure. The magnetic moment of b site is 3.642 μ Bwhich is the largest in all possible surface-adatom configurations. We also found that the silicon surface is metallic for the coverages of 0.5 and 1 ML.
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Research context

OpenAlex topics: ZnO doping and properties · Surface and Thin Film Phenomena · Graphene research and applications

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References (33)

Show source-provided references
1. Prinz · Appl. Phys. Lett. · 1981 · 39 · 39710.1063/1.92750 ↗
2. Prinz · Science · 1998 · 282 · 166010.1126/science.282.5394.1660 ↗
3. da Silva · Phys. Rev. B · 2004 · 70 · 19320510.1103/PhysRevB.70.193205 ↗
4. Bolduc · Phys. Rev. B · 2005 · 71 · 03330210.1103/PhysRevB.71.033302 ↗
5. Monsma · Science · 1998 · 281 · 40710.1126/science.281.5375.407 ↗
6. Wu · Phys. Rev. Lett. · 2004 · 92 · 23720210.1103/PhysRevLett.92.237202 ↗
7. Wu · Phys. Rev. B · 2005 · 72 · 14442510.1103/PhysRevB.72.144425 ↗
8. Thessieu · Solid State Commun. · 1995 · 95 · 70710.1016/0038-1098(95)00356-8 ↗
9. Bolduc · Phys. Rev. B · 2005 · 71 · 03330210.1103/PhysRevB.71.033302 ↗
10. Wang · Appl. Surf. Sci. · 1997 · 113/114 · 5310.1016/S0169-4332(96)00823-9 ↗
11. Lippitz · Surf. Sci. · 2005 · 575 · 30710.1016/j.susc.2004.11.029 ↗
12. Krause · J. Vac. Sci. Technol. A · 2006 · 24 · 148010.1116/1.2167070 ↗
13. da Silva · Phys. Rev. B · 2004 · 70 · 19320510.1103/PhysRevB.70.193205 ↗
14. Perdew · Phys. Rev. B · 1992 · 46 · 667110.1103/PhysRevB.46.6671 ↗
15. Perdew · Phys. Rev. B · 1992 · 45 · 1324410.1103/PhysRevB.45.13244 ↗
16. Dabrowski · Appl. Surf. Sci. · 1992 · 56–58 · 1510.1016/0169-4332(92)90208-F ↗
17. Pan · J. Chem. Phys. · 1997 · 107 · 398110.1063/1.474753 ↗
18. Mangat · Phys. Rev. B · 1993 · 47 · 1631110.1103/PhysRevB.47.16311 ↗
19. Hortamani · Phys. Rev. B · 2006 · 74 · 20530510.1103/PhysRevB.74.205305 ↗
20. Ramstad · Phys. Rev. B · 1995 · 51 · 1450410.1103/PhysRevB.51.14504 ↗
21. Over · Phys. Rev. B · 1997 · 55 · 473110.1103/PhysRevB.55.4731 ↗
22. Mete · Surf. Sci. · 2005 · 583 · 11910.1016/j.susc.2005.03.030 ↗
23. Levine · Surf. Sci. · 1970 · 34 · 9010.1016/0039-6028(73)90190-8 ↗
24. Krause · Phys. Rev. B · 2007 · 75 · 20532610.1103/PhysRevB.75.205326 ↗
25. Gutsev · J. Chem. Phys. · 2004 · 121 · 678510.1063/1.1788656 ↗
26. Chen · Phys. Rev. B · 2008 · 77 · 18442910.1103/PhysRevB.77.184429 ↗
27. Hall · Phys. Rev. B · 1997 · 55 · 473
28. Hamamatsu · Phys. Rev. B · 1998 · 57 · 1188310.1103/PhysRevB.57.11883 ↗
29. Xiao · J. Chem. Phys. · 2005 · 122 · 17470410.1063/1.1886733 ↗
30. Kobayashi · Phys. Rev. B · 1991 · 45 · 346910.1103/PhysRevB.45.3469 ↗
31. Dalpian · Fazzio Surf. Sci. · 2004 · 566–568 · 68810.1016/j.susc.2004.05.132 ↗
32. Landmark · Phys. Rev. Lett. · 1992 · 69 · 158810.1103/PhysRevLett.69.1588 ↗
33. amers · J. Vac. Sci. Technol. A · 1989 · 7 · 2584