Finite element modelling of semi and nonpolar GaN/AlN quantum dots

Abstract This paper describes results of a finite element analysis of the elastic and electric field distribution in a semipolar and a nonpolar isolated quantum dot based on previously obtained measurements from transmission electron microscopy. The two quantum dot orientations are each investigated and compared in terms of the resultant piezoelectric fields and their redistribution due to growth orientation and quantum dot geometry/surface effects. Alongside that, a standard polar quantum dot is investigated as a reference-state system. It is found that the geometry of quantum dots grown in alternative orientations affect the elastic strain and, along with orientation dependent spontaneous polarisation, modify the electrostatic potential and the built-in electric fields. A theoretical verification of a reduction in the quantum confined Stark effect by determining the band edge splitting energies for electron and hole states is given.