journal article·2006-03

Phase formation by ion beam mixing in the Ti/Si multilayer system

Veenu Sisodia, D. Kabiraj, W. Bolse, I.P. Jain

Applied Surface Science· Volume 252· Issue 11
Publisher page

Abstract

Abstract The irradiation effect of 350 MeV Au+ ions on Ti/Si multilayers has been studied using Rutherford backscattering spectroscopy, X-ray reflectivity (XRR) and grazing incidence X-ray diffraction (GIXRD). Intermixing effects have been studied as a function of fluences of 0.46 × 1014, 1.82 × 1014 and 4.62 × 1014 cm−2. Rutherford backscattering spectra (RBS) confirm mixing at the interface. X-ray reflectivity patterns show damage at the interfaces with the absence of a continuous fringe pattern at high fluence doses in comparison to the pristine interface. Mixing leads to titanium di-silicide (TiSi2) phase formation as a shown by grazing incidence X-ray diffraction patterns. The observed intermixing is attributed to energy deposited by the incident ions in the electronic system of the target. Swift heavy ion irradiation induced intermixing increases with fluence.
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Research context

OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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