Limitation current in Si3N4/SiO2 stacked dielectric films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Tanaka · IEEE Trans. Electron Devices · 1993 · 40 · 223110.1109/16.249470 ↗
2. Yun · Appl. Phys. Lett. · 1975 · 27 · 25610.1063/1.88414 ↗
3. Suvensson · J. Appl. Phys. · 1977 · 48 · 32910.1063/1.323382 ↗
4. R.S.K. Chau, S.B. Bibyk, Proc. Symp. Silicon Nitride and Silicon Dioxide Thin Insulating Films, The Electrochemical Society, NJ (1989) p. 121.
5. Arnett · J. Appl. Phys. · 1975 · 46 · 523610.1063/1.321592 ↗
6. Suzuki · J. Appl. Phys. · 1982 · 53 · 888010.1063/1.330442 ↗
7. Lios · IEEE Trans. Electron Devices · 1984 · 31 · 173610.1109/T-ED.1984.21780 ↗
8. R.V. Giridhar, Proc. Symp. Silicon Nitride and Silicon Dioxide Thin Insulating Films, The Electrochemical Society, NJ (1989) p. 60.
9. Agarwal · IEEE Trans. Electron Devices · 1985 · 32 · 94110.1109/T-ED.1985.22051 ↗
10. Yau · IEEE Electron Device Lett. · 1986 · 7 · 36510.1109/EDL.1986.26402 ↗
11. Young · IEEE Electron Device Lett. · 1988 · 9 · 61610.1109/55.9294 ↗