journal article·2001-12

Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

F. Giannazzo, L. Calcagno, F. Roccaforte, P. Musumeci, F. La Via, V. Raineri

Applied Surface Science· Volume 184· Issue 1-4
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Abstract

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OpenAlex topics: Silicon Carbide Semiconductor Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

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References (16)

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