IR study on the effect of chloride ion on porous silicon

Abstract Infrared (IR) studies have been carried out on porous silicon samples to infer on the changes in the surface bonding in the porous silicon (PS) layer due to chloride (Cl−) and subsequent fluoride (F−) ion exposures with respect to time. It is observed that silicon hydride linkages decreases and silicon oxide linkages increases with time of exposure to HCl, suggesting a possible oxidation of the porous layer. IR study revealed the formation of Si O (silanones) bonds. A possible mechanism for the formation of silanones from Si OH species has been proposed to explain the observation. We also observed a saturation of silicon oxide groups with complete disappearance of silicon hydride peaks indicating the complete conversion of silicon hydride to oxides. Furthermore on exposure to F−, the IR spectrum showed a rapid destruction of silicon oxygen linkages.