Determination of defects in 6H–SiC single crystals irradiated with 20MeV Au ions
Source abstract
Abstract
In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence. (C) 2008 Elsevier B.V. All rights reserved.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Ion-surface interactions and analysis · Electrostatic Discharge in Electronics
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References (16)
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