A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure
Source abstract
Abstract
Abstract In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. Castro Neto · Rev. Mod. Phys. · 2009 · 81 · 10910.1103/RevModPhys.81.109 ↗
2. Iwan · Prog. Polym. Sci. · 2012 · 37 · 180510.1016/j.progpolymsci.2012.08.001 ↗
3. Geim · Science · 2009 · 324 · 153010.1126/science.1158877 ↗
4. Schlesinger · Mater. Sci. Eng. R Rep. · 2001 · 32 · 10310.1016/S0927-796X(01)00027-4 ↗
5. 11th International Conference on II-VI Compounds
6. Le · Med. Phys. · 2010 · 37 · 122510.1118/1.3312435 ↗
7. Kim · Curr. Appl. Phys. · 2009 · 9 · 30610.1016/j.cap.2008.01.020 ↗
8. Xu · Appl. Surf. Sci. · 2014 · 305 · 47710.1016/j.apsusc.2014.03.117 ↗
9. Tokuda · J. Mater. Sci. Mater. Electron. · 2004 · 15 · 110.1023/A:1026297416093 ↗
10. Cai · Vacuum · 2013 · 88 · 2810.1016/j.vacuum.2012.08.009 ↗
11. Sun · Appl. Phys. A · 2014 · 115 · 130910.1007/s00339-013-7989-4 ↗
12. Uri · Nucl. Instrum. Methods Phys. Res. A · 1999 · 436 · 14610.1016/S0168-9002(99)00611-7 ↗
13. Bolotnikov · Nucl. Instrum. Methods Phys. Res. A · 2002 · 482 · 39510.1016/S0168-9002(01)01506-6 ↗
14. Holder · Semicond. Sci. Technol. · 1995 · 10 · 7710.1088/0268-1242/10/1/013 ↗
15. Zheng · Thin Solid Films · 2012 · 525 · 5610.1016/j.tsf.2012.09.058 ↗
16. Ghosh · Microelectron. Eng. · 2009 · 86 · 218710.1016/j.mee.2009.03.040 ↗
17. Wang · Nat. Commun. · 2014 · 5 · 535710.1038/ncomms6357 ↗
18. Ferrari · Phys. Rev. Lett. · 2006 · 97 · 18740110.1103/PhysRevLett.97.187401 ↗
19. Nair · Science · 2008 · 320 · 130810.1126/science.1156965 ↗