journal article·1999-01

Grain boundary reactive diffusion during Ni2Si formation in thin films and its dependence on the grain boundary angle

P.M. Jardim, W. Acchar, W. Losch

Applied Surface Science· Volume 137· Issue 1-4
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Abstract

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Intermetallics and Advanced Alloy Properties

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References (24)

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