journal article·2007-02

Understanding deviations in lithographic patterns near interfaces: Characterization of bottom anti-reflective coatings (BARC) and the BARC–resist interface

Joseph L. Lenhart, Daniel Fischer, Sharadha Sambasivan, Eric K. Lin, Wen-Li Wu, Douglas J. Guerrero, Yubao Wang, Rama Puligadda

Applied Surface Science· Volume 253· Issue 9
Publisher page

Abstract

Interactions between a bottom anti-reflective coating (BARC) and a photoresist can critically impact lithographic patterns. For example, a lithographic pattern can shrink or spread near a BARC interface, a process called undercutting or footing respectively, due to incompatibility between the two materials. Experiments were conducted on two industrial BARC coatings in an effort to determine the impact of BARC surface chemistry on the footing and undercutting phenomena. The BARC coatings were characterized by near edge X-ray absorption fine structure (NEXAFS), contact angle measurements, and neutron and X-ray reflectivity. Contact angle measurement using a variety of fluids showed that the fluid contact angles were independent of the type of BARC coating or the BARC processing temperature. NEXAFS measurements showed that the surface chemistry of each BARC was also independent of the processing temperature. These results suggest that acid-base interactions at the BARC-resist interface are not the cause of the footing-undercutting phenomena encountered in lithographic patterns.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advancements in Photolithography Techniques · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (46)

Show source-provided references
1. National Technology Roadmap for Semiconductors, The Semiconductor Industry Association, San Jose, CA, 2001.
2. Ito · IBM J. Res. Develop. · 1997 · 41 · 6910.1147/rd.411.0069 ↗
3. Wallraff · Chem. Rev. · 1999 · 99 · 180110.1021/cr980003i ↗
4. Reichmanis · Chem. Mater. · 1991 · 3 · 39410.1021/cm00015a009 ↗
5. Hinsberg · IBM J. Res. Develop. · 2001 · 45 · 66710.1147/rd.455.0667 ↗
6. Reichmanis · Acc. Chem. Res. · 1999 · 32 · 65910.1021/ar970150n ↗
7. Uhrich · Chem. Mater. · 1994 · 6 · 29510.1021/cm00039a008 ↗
8. Ito · Proc. SPIE · 1999 · 3678 · 210.1117/12.350143 ↗
9. Reichmanis · Adv. Mater. For Opt. Elect. · 1994 · 4 · 8310.1002/amo.860040205 ↗
10. Rathsack · Proc. SPIE · 2001 · 4186 · 57810.1117/12.410739 ↗
11. Sekiguchi · Jpn. J. Appl. Phys. · 2000 · 39 · 139210.1143/JJAP.39.1392 ↗
12. Ito · Jpn. J. Appl. Phys. · 1992 · 31 · 427310.1143/JJAP.31.4273 ↗
13. Kozawa · Jpn. J. Appl. Phys. · 1993 · 32 · 604910.1143/JJAP.32.6049 ↗
14. Nalamasu · Poly. Eng. Sci. · 1992 · 32 · 156510.1002/pen.760322104 ↗
15. MacDonald · Chem. Mater. · 1993 · 5 · 34810.1021/cm00027a018 ↗
16. Hinsberg · Chem. Mater. · 1994 · 48110.1021/cm00040a024 ↗
17. Yoshino · Microelectron. Eng. · 1997 · 35 · 15310.1016/S0167-9317(96)00177-3 ↗
18. Bailey · Proc. SPIE · 2000 · 3999 · 93510.1117/12.388256 ↗
19. Guerrero · Proc. SPIE · 1998 · 3333 · 22810.1117/12.312412 ↗
20. McCullouch · J. Appl. Poly. Sci. · 1999 · 74 · 130410.1002/(SICI)1097-4628(19991031)74:5<1304::AID-APP29>3.0.CO;2-Y ↗
21. Brunner · Proc. SPIE · 1991 · 1466 · 29710.1117/12.46410 ↗
22. Sturtevant · Proc. SPIE · 1996 · 2724 · 73810.1117/12.241872 ↗
23. Pavelchek · Proc. SPIE · 1996 · 2724 · 69210.1117/12.241867 ↗
24. Soo · IEEE Trans. Semicond. Manuf. · 1999 · 12 · 46210.1109/66.806124 ↗
25. Certain commercial equipment, instruments, or materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.
26. For detailed information about the NIST/Dow Soft X-ray Materials Characterization Facility at NSLS BNL. see http://www.nslsweb.nsls.bnl.gov/nsls/pubs/newsletters/pdfs/96-nov.pdf.
27. Stöhr · 1992 · 25
28. Parratt · Phys. Rev. · 1954 · 95 · 35910.1103/PhysRev.95.359 ↗
29. Contact angles and the surface free energies of solids
30. Della Volpe · 2000 · 171
31. Fryer · Macromolecules · 2000 · 33 · 643910.1021/ma0003349 ↗
32. Keddie · Faraday Discuss. · 1994 · 98 · 21910.1039/fd9949800219 ↗
33. Prucker · Macromol. Chem. Phys. · 1998 · 199 · 143510.1002/(SICI)1521-3935(19980701)199:7<1435::AID-MACP1435>3.0.CO;2-# ↗
34. Kawana · Phys. Rev. E. · 2001 · 6310.1103/PhysRevE.63.021501 ↗
35. Tsui · Macromolecules · 2001 · 34 · 913910.1021/ma0102159 ↗
36. Tsui · Macromolecules · 2001 · 34 · 553510.1021/ma000028v ↗
37. Fakao · Phys. Rev. E. · 2000 · 61 · 174310.1103/PhysRevE.61.1743 ↗
38. Tate · J Chem. Phys. · 2001 · 115 · 998210.1063/1.1415497 ↗
39. Wallace · Phys. Rev. E · 1995 · 52 · R332910.1103/PhysRevE.52.R3329 ↗
40. Keddie · Europhys. Lett. · 1994 · 27 · 5910.1209/0295-5075/27/1/011 ↗
41. Fryer · Macromolecules · 2001 · 34 · 562710.1021/ma001932q ↗
42. van Zanten · Phys. Rev. E · 1996 · 53 · R205310.1103/PhysRevE.53.R2053 ↗
43. Soles · J. Vac. Sci. Technol. B · 2001 · 19 · 269010.1116/1.1415502 ↗
44. Lenhart · Macromolecules · 2002 · 35 · 514510.1021/ma011903v ↗
45. Lenhart · Langmuir · 2003 · 19 · 486310.1021/la030018y ↗
46. Ito · J. Photopolym. Sci. Technol. · 1998 · 11 · 37910.2494/photopolymer.11.379 ↗