Strain effects in device processing of silicon-on-insulator materials

Reporting on residual strain in silicon-on-insulator (SOI) materials we show that multi-insulating layer structures, in which silicon dioxide and silicon nitride are mixed with appropriate thicknesses, can lead to a new family of strain-free materials. This reduces only the original strain and, of course, does not significantly modify any process-induced effect. However, after proper annealing, this should help coming back to a better relaxation level. (C) 2003 Elsevier Science B.V. All rights reserved.