STM and FIB nano-structuration of surfaces to localise InAs/InP(001) quantum dots

Abstract STM and nano-FIB have been used to modify InP(0 0 1) and related materials surfaces at nanoscale in order to create nucleation sites for quantum dots. STM has permitted the fabrication of holes as small as being 11.2±2.8 nm large and 3±0.8 nm deep on AlInAs surfaces. Nano-FIB has allowed the fabrication of hole arrays with hole diameter of 87±10 nm, hole depth of 1.5±1 nm, and array period of 100 nm. FIB-made holes are stable under annealing, but the surface exhibit pollution and structural degradations due to a direct exposure to Ga + ion beam. Holes obtained by both techniques could be suitable to be used as nucleation sites for quantum dots.