journal article·2008-12

Influences of annealing temperature on the optical properties of SiOx thin film prepared by reactive magnetron sputtering

Feng Huang, Qiuming Song, Ming Li, Bin Xie, Haiqian Wang, Yousong Jiang, Yizhou Song

Applied Surface Science· Volume 255· Issue 5
Publisher page

Abstract

Abstract SiO x films with different oxygen contents were prepared by reactive magnetron sputtering and annealed at a temperature range of 200–1000 °C in ambient air atmosphere. The dependences of the film thickness, refractive index and optical gap, as well as the structural and compositional properties on the annealing temperature were studied. Three evolution stages with annealing temperature were observed. The first stage occurs below 400 °C, at which the film thickness expands, the refractive index reduces and the optical gap increases. The second stage sets in at around 400–500 °C and persists to a temperature of around 800 °C. At this stage, film thickness reduces, refractive index increases and the optical gap decreases. The third stage takes place at annealing temperatures above 800 °C, where the films become inhomogeneous from surface to interface due to oxidization. Stress relaxation, phase separation and oxidation mechanisms were correlated with the optical properties of the annealed films.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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