journal article·1996-07

High purity ozone oxidation on hydrogen passivated silicon surface

A. Kurokawa, S. Ichimura

Applied Surface Science· Volume 100-101
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Advanced Memory and Neural Computing

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References (13)

Show source-provided references
1. Hirashita · Appl. Phys. Lett. · 1990 · 56 · 45110.1063/1.102762 ↗
2. Westermann · Surf. Sci. · 1994 · 311 · 10110.1016/0039-6028(94)90482-0 ↗
3. Higashi · Appl. Phys. Lett. · 1990 · 56 · 65610.1063/1.102728 ↗
4. Ikeda · J. Appl. Phys. · 1995 · 77 · 512510.1063/1.359323 ↗
5. Kurokawa · Jpn. J. Appl. Phys. · 1995 · 34 · L160610.1143/JJAP.34.L1606 ↗
6. Briggs · 1983
7. Ichimura · J. Vac. Sci. Technol. A · 1991 · 9 · 236910.1116/1.577278 ↗
8. Hosokawa · Rev. Sci. Instr. · 1991 · 62 · 161410.1063/1.1142440 ↗
9. Westermann · Surf. Sci. · 1994 · 311 · 10110.1016/0039-6028(94)90482-0 ↗
10. Owman · Surf. Sci. · 1994 · 303 · L36710.1016/0039-6028(94)90772-2 ↗
11. Stockhausen · Appl. Surf. Sci. · 1992 · 56 · 79510.1016/0169-4332(92)90340-4 ↗
12. Hofer · Phys. Rev. B · 1989 · 40 · 113010.1103/PhysRevB.40.1130 ↗
13. Pauling · 1982