journal article·1999-04

Optimization of depth resolution parameters in AES sputter profiling of GaAs/AlAs multilayer structures

A Rar, S Hofmann, K Yoshihara, K Kajiwara

Applied Surface Science· Volume 144-145
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Metal and Thin Film Mechanics

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References (14)

Show source-provided references
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6. Hofmann · J. Surf. Anal. · 1998 · 4 · 9
7. Hofmann · J. Surf. Analysis · 1999 · 5 · 40
8. Seidel · Surf. Interface Anal. · 1998 · 26 · 30610.1002/(SICI)1096-9918(199804)26:4<306::AID-SIA374>3.0.CO;2-V ↗
9. Hofmann · Appl. Phys. · 1977 · 13 · 20510.1007/BF00882481 ↗
10. Tanuma · Surf. Interface Anal. · 1991 · 17 · 92710.1002/sia.740171305 ↗
11. Jablonski · Surf. Interface Anal. · 1993 · 20 · 77110.1002/sia.740200906 ↗
12. A. Benninghoven, F.G. Ruedenauer, H.W. Werner, Secondary Ion Mass Spectrometry, Wiley, New York, 1987.10.1016/S0003-2670(00)85312-X ↗
13. Zalm · J. Appl. Phys. · 1984 · 56 · 22010.1063/1.333755 ↗
14. A. Rar, I. Kojima, S. Hofmann, to be published.