Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer
Source abstract
Abstract
Abstract The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La 2 O 3 /Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Electron and X-Ray Spectroscopy Techniques
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References (8)
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