journal article·1995-01

An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, K. Sumino

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Muon and positron interactions and applications · Semiconductor materials and devices · Silicon and Solar Cell Technologies

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References (17)

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