Characterization of the buried interface in a Ni (film)/3C-SiC (substrate) system using SXES
Source abstract
Abstract
We investigated the interface reaction between Ni (film) and 3C-SiC (substrate) after heat treatment by soft X-ray emission spectroscopy (SXES). Si atoms were found to react with Ni atoms at the interface by heat treatment at 600–800°C. The reacted product was identified as Ni2Si. Carbon atoms are concluded to be in a graphite-like state in the reacted film from the spectral shape of the CKα. Those carbon atoms were found to be distributed around the interface region.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and interfaces · Copper Interconnects and Reliability
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References (16)
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