Initial adsorption and C-incorporation of organosilanes at Si(0 0 1) investigated by temperature-programmed desorption
Source abstract
Abstract
Abstract Temperature-programmed desorption (TPD) has been used to study the initial adsorption and C-incorporation of organosilanes [monomethylsilane (MMS), dimethylsilane (DMS) and trimethylsilane (TMS)] at Si(0 0 1) surfaces. Hydrogen was the only desorbing species observed in the TPD spectra from organosilanes. Organosilane molecules adsorb dissociatively on the Si(0 0 1) surfaces at room temperature. TPD spectra from DMS- and TMS-adsorbed Si surfaces present carbon-related hydrogen (H2) desorption peaks from the initial adsorption. The carbon-incorporation ratio was found to be larger in the order of TMS > DMS > MMS, with the sticking probability of molecules being almost identical for the three organosilane molecules.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices · Semiconductor materials and interfaces
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References (24)
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