journal article·2023-12

Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy

Vladimir Mansurov, Timur Malin, Vladimir Golyashov, Denis Milakhin, Konstantin Zhuravlev

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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices

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References (80)

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