Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation
Source abstract
Abstract
This study presents a laser activation process (LAP) for germanium (Ge) to improve the electrical performance of n-type Ge devices. The LAP highly activated the dopant and created a shallow junction in Ge. We also investigated a triple contact of titanium (Ti)/nickel (Ni) nano-island/Ge to reduce contact resistivity and enhance the tunneling current. The results showed that the LAP with a fluence of 140 mJ/cm2 effectively activated the dopant, resulting in a high forward current density and a low ideality factor of the n+-p junction diode. The triple contact of Ti/Ni nano-island/Ge showed the lowest specific contact resistivity, indicating an increase in the tunneling current. The Ni nano-island contact showed the best overall electrical performance, attributed to the boosted electric field and the lower density of states at the interface. The results show that combining multiple approaches, including the optimized laser activation process and triple contact formation, can significantly reduce the contact resistance on n-type Ge, providing a promising approach for improving performance. ; TRUE ; scie ; scopus
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (66)
Show source-provided references
1. The era of hyper-scaling in electronics10.1038/s41928-018-0117-x ↗
2. High-k/metal-gate stack and its MOSFET characteristics10.1109/LED.2004.828570 ↗
3. M. Jurczak, N. Collaert, A. Veloso, T. Hoffmann, S. Biesemans, Review of FINFET technology, Int. SOI conference (2009) pp. 1-4. https://doi.org/10.1109/SOI.2009.5318794.10.1109/SOI.2009.5318794 ↗
4. K. Cheng, A. Khakifirooz, N. Loubet, S. Luning, T. Nagumo, M. Vinet, Q. Liu, A. Reznicek, T. Adam, S. Naczas, High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET, Int. Electron Devices Meet. (2012) pp. 18.11. 11-18.11. 14. https://doi.org/10.1109/IEDM.2012.6479063.10.1109/IEDM.2012.6479063 ↗
5. International Roadmap for Devices and Systems (IRDS™) 2021 Edition, https://irds.ieee.org/editions/2021, 2021.
6. Germanium CMOS potential from material and process perspectives: Be more positive about germanium10.7567/JJAP.57.010101 ↗
7. S.-h.C. Baek, Y.-J. Seo, J.G. Oh, M.G. Albert Park, J.H. Bong, S.J. Yoon, M. Seo, S.-y. Park, B.-G. Park, S.-H. Lee, Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers, Appl. Phys. Lett., 105 (2014). https://doi.org/10.1063/1.4893668.10.1063/1.4893668 ↗
8. Fermi-level depinning in metal/Ge interface using oxygen plasma treatment10.1016/j.apsusc.2018.08.187 ↗
9. Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices10.3390/electronics11152419 ↗
10. High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H₂ Plasma Treatment10.1109/LED.2022.3182730 ↗
11. Boosting n-type doping levels of Ge with co-doping by integrating plasma-assisted atomic layer deposition and flash annealing process10.1109/LED.2019.2931404 ↗
12. J. Kim, S.W. Bedell, D.K. Sadana, Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus, Appl. Phys. Lett., 98 (2011) https://doi.org/10.1063/1.3558715.10.1063/1.3558715 ↗
13. Co-doping with antimony to control phosphorous diffusion in germanium10.1063/1.4792480 ↗
14. Reduction of phosphorus diffusion in germanium by fluorine implantation10.1063/1.4847555 ↗
15. S.-H. Huang, F.-L. Lu, C. Liu, Low contact resistivity (1.5×10− 8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing, Int. Symp. on VLSI Tech., Systems and Application (VLSI-TSA), IEEE, (2016), pp. 1-2 https://doi.org/10.1109/VLSI-TSA.2016.7480526.10.1109/VLSI-TSA.2016.7480526 ↗
16. Conformal and ultra shallow junction formation achieved using a pulsed-laser annealing process integrated with a modified plasma assisted doping method10.1109/ACCESS.2020.3024636 ↗
17. Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers10.1149/1.3545703 ↗
18. NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices10.1109/TED.2011.2164801 ↗
19. On the diffusion and activation of n-type dopants in Ge10.1016/j.mssp.2012.06.014 ↗
20. Diffusion of n-type dopants in germanium10.1063/1.4838215 ↗
21. Point defect engineering strategies to retard phosphorous diffusion in germanium10.1039/C2CP42973J ↗
22. O. Gluschenkov, Z. Liu, H. Niimi, S. Mochizuki, J. Fronheiser, X. Miao, J. Li, J. Demarest, C. Zhang, C. Niu, FinFET performance with Si: P and Ge: Group-III-Metal metastable contact trench alloys, Int. Electron Devices Meet. (2016) pp. 17.12. 11-17.12. 14. https://doi.org/10.1109/IEDM.2016.7838437.10.1109/IEDM.2016.7838437 ↗
23. Z. Liu, O. Gluschenkov, H. Niimi, B. Liu, J. Li, J. Demarest, S. Mochizuki, P. Adusumilli, M. Raymond, A. Carr, Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability, Symposium on VLSI Technology (2017) pp. T212-T213. https://doi.org/10.23919/VLSIT.2017.7998175.10.23919/VLSIT.2017.7998175 ↗
24. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium10.1103/PhysRevB.77.214109 ↗
25. Copper related diffusion phenomena in germanium and silicon10.1016/j.mssp.2004.06.001 ↗
26. Observation and suppression of nickel germanide overgrowth on germanium substrates with patterned SiO2 structures10.1149/1.2820441 ↗
27. Low-resistance titanium contacts and thermally unstable nickel germanide contacts on p-type germanium10.1109/LED.2016.2524041 ↗
28. Electron transport of inhomogeneous Schottky barriers: A numerical study10.1063/1.349737 ↗
29. Reduction of metal-semiconductor contact resistance by embedded nanocrystals
30. Embedded nanoparticles in Schottky and Ohmic contacts: a review10.1080/10408436.2014.940444 ↗
31. H.H. Gatzen, V. Saile, J. Leuthold, Micro and nano fabrication, Springer, Berlin, Heidelberg, 1 (2015) 2.10.1007/978-3-662-44395-8_1 ↗
32. Bäuerle · 2013
33. Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing10.1063/5.0073827 ↗
34. A. Cullis, H. Webber, N. Chew, Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the melt, Appl. Phys. Lett., 42 (1983) 875-877 https://doi.org/10.1063/1.93798.10.1063/1.93798 ↗
35. P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation10.1116/1.2805249 ↗
36. High yield solution− liquid− solid synthesis of germanium nanowires10.1021/ja055850z ↗
37. E. Simoen, A. Brugere, A. Satta, A. Firrincieli, B. Van Daele, B. Brijs, O. Richard, J. Geypen, M. Meuris, W. Vandervorst, Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium, J. Appl. Phys. 105 (2009) 093538 https://doi.org/10.1063/1.3125459.10.1063/1.3125459 ↗
38. Effect of doping on the temperature coefficient of resistance of polysilicon films10.1134/S1063739707030031 ↗
39. Saturation and pressure effects on the resistivity of titanium and two Ti-Al alloys10.1016/j.jpcs.2018.05.046 ↗
40. V. Pavan Kishore, P. Paramahans, S. Sadana, U. Ganguly, S. Lodha, Nanocrystal-based Ohmic contacts on n and p-type germanium, Appl. Phys. Lett, 100 (2012) 142107 https://doi.org/10.1063/1.3700965.10.1063/1.3700965 ↗
41. Barrier modification of metal-contact on silicon by sub-2 nm platinum nanoparticles and thin dielectrics
42. Au nanoparticles embedded at the interface of Al/4H-SiC Schottky contacts for current density enhancement10.1007/s00339-014-8733-4 ↗
43. Local Schottky contacts of embedded Ag nanoparticles in Al2O3/SiNx: H stacks on Si: a design to enhance field effect passivation of Si junctions10.1088/1361-6528/aac032 ↗
44. M.d. Rezeq, Improved figures of merit of nano-Schottky diode by embedding and characterizing individual gold nanoparticles on n-Si substrates10.1088/1361-6528/ab5e3e ↗
45. A novel parameter extraction method for the one-diode solar cell model10.1016/j.solener.2010.03.012 ↗
46. Germanium n+/p Diodes: A Dilemma Between Shallow Junction Formation and Reverse Leakage Current Control10.1109/TED.2009.2039542 ↗
47. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current10.1109/TED.2014.2364957 ↗
48. J. Kim, S.W. Bedell, D.K. Sadana, Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit, Appl. Phys. Lett., 101 (2012) 112107 https://doi.org/10.1063/1.4751845.10.1063/1.4751845 ↗
49. Phosphorus diffusion in germanium following implantation and excimer laser annealing10.1016/j.apsusc.2014.02.041 ↗
50. Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing10.1109/TED.2014.2332461 ↗
51. G. Margutti, P. Diego Martirani, M. De Biase, L. Latessa, M. Barozzi, E. Demenev, L.M. Rubin, C. Spaggiari, Silicon defects characterization for low temperature ion implantation and spike anneal processes, Int. Conference on Ion Implantation Tech., (2014), pp. 1-4. https://doi.org/10.1109/IIT.2014.6940014.10.1109/IIT.2014.6940014 ↗
52. Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices, ECS10.1149/2.0011707jss ↗
53. Investigation of a Ge-Source Vertical TFET With Delta-Doped Layer10.1109/TED.2019.2933313 ↗
54. Extraction of Schottky diode parameters from forward current-voltage characteristics10.1063/1.97359 ↗
55. Control of Schottky barrier height using highly doped surface layers10.1016/0038-1101(76)90019-8 ↗
56. A. Firrincieli, K. Martens, R. Rooyackers, B. Vincent, E. Rosseel, E. Simoen, J. Geypen, H. Bender, C. Claeys, J.A. Kittl, Study of ohmic contacts to n-type Ge: Snowplow and laser activation, Appl. Phys. Lett., 99 (2011). https://doi.org/10.1063/1.3666045.10.1063/1.3666045 ↗
57. Ohmic contacts to n-type germanium with low specific contact resistivity10.1063/1.3676667 ↗
58. S. Gupta, P. Paramahans Manik, R. Kesh Mishra, A. Nainani, M.C. Abraham, S. Lodha, Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts, J. Appl. Phys., 113 (2013). https://doi.org/10.1063/1.4811340.10.1063/1.4811340 ↗
59. Laser Spike Annealing for Shallow Junctions in Ge CMOS10.1109/TED.2016.2635625 ↗
60. Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization10.1109/TED.2015.2477441 ↗
61. Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique10.1109/LED.2013.2272641 ↗
62. G. Thareja, J. Liang, S. Chopra, B. Adams, N. Patil, S.-L. Cheng, A. Nainani, E. Tasyurek, Y. Kim, S. Moffatt, High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm-3, Int. Electron Devices Meet., (2010) pp. 10.15. 11-10.15. 14. https://doi.org/10.1109/IEDM.2010.5703336.10.1109/IEDM.2010.5703336 ↗
63. Low specific contact resistivity to n-Ge and well-behaved Ge n+/p diode achieved by implantation and excimer laser annealing10.7567/APEX.6.106501 ↗
64. Reduction in Specific Contact Resistivity to n+ Ge Using TiO2 Interfacial Layer10.1109/LED.2012.2214758 ↗
65. H. Miyoshi, T. Ueno, K. Akiyama, Y. Hirota, T. Kaitsuka, In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS, Dig. Tech. Pap. Symposium on VLSI Technology, (2014) pp. 1-2. https://doi.org/10.1109/VLSIT.2014.6894409.10.1109/VLSIT.2014.6894409 ↗
66. The ∼3×1020 cm-3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing10.1109/LED.2015.2478916 ↗