Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. In-rich In1−xGaxN films by metalorganic vapor phase epitaxy10.1063/1.1842375 ↗
2. Development of InGaN-based red LED grown on (0001) polar surface10.7567/APEX.7.071003 ↗
3. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress10.1063/1.5142538 ↗
4. Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Y. Zhao, S. P. DenBaars, S. Nakamura, Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage, Japanese Journal of Applied Physics, 52 (2013) 08JC08.10.7567/JJAP.52.08JC08.10.7567/JJAP.52.08JC08 ↗
5. Monolithic integration of four-colour InGaN-based nanocolumn LEDs10.1049/el.2015.0770 ↗
6. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE10.1007/BF02655831 ↗
7. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping10.1063/1.5010762 ↗
8. 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE10.1016/j.jcrysgro.2011.12.075 ↗
9. Bandgap energy bowing parameter of strained and relaxed InGaN layers10.1364/OME.4.001030 ↗
10. Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates
11. Optical studies on the red luminescence of InGaN epilayers10.1016/j.spmi.2004.09.020 ↗
12. Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature10.1063/1.4857535 ↗
13. Y. Zhang, Y. Liu, T. Kimura, M. Hirata, K. Prasertusk, S. Ji, R. Katayama, T. Matsuoka, Effect of growth temperature on structure properties of InN grown by pressurized-reactor metalorganic vapor phase epitaxy, physica status solidi c 8 (2011) 482-484. 10.1002/pssc.201000464.10.1002/pssc.201000464 ↗
14. Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth10.1016/j.apsusc.2017.09.074 ↗
15. High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy10.1143/APEX.5.015502 ↗
16. Progress in nitride semiconductors from GaN to InN—MOVPE growth and characteristics10.1016/j.spmi.2004.06.003 ↗
17. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology10.1002/pssa.202000462 ↗
18. Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy10.1016/j.tsf.2013.04.004 ↗
19. Low-field electron mobility in wurtzite InN10.1063/1.2166195 ↗
20. Proposal of High-Electron Mobility Transistors With Strained InN Channel10.1109/TED.2010.2101602 ↗
21. Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire10.1016/j.jcrysgro.2008.01.024 ↗
22. Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System10.1143/JJAP.51.01AF02 ↗
23. The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy10.1002/1521-396X(200112)188:2<663::AID-PSSA663>3.0.CO;2-7 ↗
24. Growth kinetics and characterizations of gallium nitride thin films by remote PECVD10.1557/JMR.1993.0847 ↗
25. Characterizations of GaN film growth by ECR plasma chemical vapor deposition10.1016/j.jcrysgro.2009.03.040 ↗
26. Remote Plasma MOCVD Growth and Processing of GaN: A Study by Real Time Ellipsometry10.1002/(SICI)1521-396X(199911)176:1<733::AID-PSSA733>3.0.CO;2-I ↗
27. Modeling and experimental analysis of RPCVD based nitride film growth
28. The dependence of GaN growth rate on electron temperature in an ECR plasma10.1016/S0257-8972(00)00842-2 ↗
29. Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition10.1063/1.116236 ↗
30. C. Sone, M. Hong Kim, H. Jin Kim, E. Yoon, Effects of hydrogen on carbon incorporation in GaN grown by remote plasma-enhanced metal-organic chemical vapor deposition, Journal of Crystal Growth, 189-190 (1998) 321-324.10.1016/S0022-0248(98)00278-4.10.1016/S0022-0248(98)00278-4 ↗
31. Barmawi, Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD10.1016/S0022-0248(00)00706-5 ↗
32. Plasma-excited organometallic vapor phase epitaxy of GaN on (0 0 0 1)sapphire10.1016/S0022-0248(96)01045-7 ↗
33. Substrate nitridation effect and low temperature growth of GaN on sapphire (0 0 0 1) by plasma-excited organometallic vapor-phase epitaxy10.1016/S0022-0248(97)00400-4 ↗
34. Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy10.1016/S0022-0248(00)00705-3 ↗
35. L. Wei-Chi, C. Chun-Yen, Y. Meiso, G. Jen-Dar, T. Jian-Shihn, C. Shih-Hsiung, B. Jong-Shing, W. Sun-Chin, H. Ray-Hua, M. S. SimonEpitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, 37 (1998) 5465.10.1143/JJAP.37.5465.10.1143/JJAP.37.5465 ↗
36. Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy10.1063/1.96643 ↗
37. Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power10.1016/j.jcrysgro.2014.01.014 ↗
38. Microwave-excited atmospheric-pressure plasma jets using a microstrip line10.1063/1.3025841 ↗
39. J. Kim, H. Sakakita, H. Ohsaki, M. Katsurai, Microwave-excited atmospheric pressure plasma jet with wide aperture for the synthesis of carbon nanomaterials, Japanese Journal of Applied Physics, 54 (2015) 01AA02.10.7567/JJAP.54.01AA02.10.7567/JJAP.54.01AA02 ↗
40. Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures10.1002/tee.23194 ↗
41. Surface modification of Ti-6Al-4V alloy by cathode assiting discharge setup and conventional plasma nitriding methods10.1007/s11431-013-5252-z ↗
42. Bulk titanium nitride material obtained from SHS starting powder: Densification, mechanical characterization and tribological approach10.1016/j.ijrmhm.2005.05.013 ↗
43. CO2laser nitriding of titanium10.1088/0022-3727/41/8/085208 ↗
44. H. Itagaki, S. Hirose, J. Kim, M. Ogura, X. Wang, A. Nonaka, H. Ogiso, H. Sakakita, A low-power nitriding technique utilizing a microwave-excited radical flow, Japanese Journal of Applied Physics, 55 (2016) 06HC05.10.7567/JJAP.55.06HC05.10.7567/JJAP.55.06HC05 ↗
45. Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure10.1016/j.surfin.2018.12.001 ↗
46. Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl 2 plasma etching of GaN
47. Plasma-induced damage to n-type GaN10.1063/1.1311605 ↗
48. M. Minami, S. Tomiya, K. Ishikawa, R. Matsumoto, S. Chen, M. Fukasawa, F. Uesawa, M. Sekine, M. Hori, T. Tatsumi, Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma, Japanese Journal of Applied Physics, 50 (2011) 08JE03.10.1143/JJAP.50.08JE03.10.7567/JJAP.50.08JE03 ↗
49. Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma10.1063/1.373438 ↗
50. Z. Liu, J. Pan, T. Kako, K. Ishikawa, K. Takeda, H. Kondo, O. Oda, M. Sekine, M. Hori, Suppression of plasma-induced damage on GaN etched by a Cl2plasma at high temperatures, Japanese Journal of Applied Physics, 54 (2015) 06GB04.10.7567/JJAP.54.06GB04.10.7567/JJAP.54.06GB04 ↗
51. A study of reactive ion etching damage effects in GaN10.1016/S0167-9317(01)00489-0 ↗
52. PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers10.1016/j.nimb.2011.08.001 ↗
53. R. Kometani, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, Surface morphology on high-temperature plasma-etched gallium nitride, Transactions of the Materials Research Society of Japan, 38 (2013) 325-328.10.14723/tmrsj.38.325.10.14723/tmrsj.38.325 ↗
54. A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface10.7567/APEX.6.056201 ↗
55. Vacancy effects on plasma-induced damage to $n$-type GaN10.1103/PhysRevB.64.205302 ↗
56. Electrical effects of plasma damage in p-GaN10.1063/1.125080 ↗
57. Inductively coupled plasma damage in GaN Schottky diodes10.1116/1.590785 ↗
58. Schottky diode measurements of dry etch damage in n- and p-type GaN10.1116/1.582314 ↗
59. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact10.7567/1882-0786/ab13d7 ↗
60. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN10.1016/S0038-1101(01)00016-8 ↗
61. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes10.1016/S0038-1101(01)00248-9 ↗
62. The effects of nitrogen plasma on reactive-ion etching induced damage in GaN10.1063/1.1632552 ↗
63. The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN10.1007/s11664-998-0397-4 ↗
64. Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases10.1063/1.369188 ↗
65. R. J. Shul, G. B. McClellan, S. A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. K. Jr., C. Tran, M. Schurman, Inductively coupled plasma etching of GaN, Applied Physics Letters, 69 (1996) 1119-1121.10.1063/1.117077.10.1063/1.117077 ↗
66. Inductively coupled plasma-induced etch damage of GaN p-n junctions10.1116/1.582313 ↗
67. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes10.1002/advs.201700637 ↗
68. Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma10.1007/s11664-997-0168-7 ↗
69. High quality lamella preparation of gallium nitride compound semiconductor using Triple Beam™ system10.1088/1742-6596/902/1/012019 ↗
70. Damage to epitaxial GaN layers by silicon implantation10.1063/1.117526 ↗
71. Lattice damage produced in GaN by swift heavy ions10.1063/1.1703826 ↗
72. Damage buildup in GaN under ion bombardment10.1103/PhysRevB.62.7510 ↗
73. M. Kodera, A. Yoshioka, T. Sugiyama, T. Ohguro, T. Hamamoto, T. Kawamoto, T. Yamanaka, Z. Xinyu, S. Lester, N. Miyashita, Impact of Plasma-Damaged-Layer Removal on GaN HEMT Devices, physica status solidi (a), 215 (2018) 1700633.10.1002/pssa.201700633.10.1002/pssa.201700633 ↗
74. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN10.1103/PhysRevB.50.18017 ↗
75. C. Buchheim, R. Goldhahn, M. Rakel, C. Cobet, N. Esser, U. Rossow, D. Fuhrmann , A. Hangleiter, Dielectric function and critical points of the band structure for AlGaN alloys, physica status solidi (b), 242 (2005) 2610-2616.10.1002/pssb.200541265.10.1002/pssb.200541265 ↗
76. Dielectric function of wurtzite GaN and AlN thin films10.1016/S0038-1098(99)00323-3 ↗
77. Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase: Van Hove singularities in the GaN dielectric function10.1002/pssb.200945200 ↗
78. Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to ${10}20 \mathrm{cm}^{\ensuremath{-}3}$10.1103/PhysRevB.90.075203 ↗
79. Optical properties of cubic and hexagonal CdSe10.1063/1.359815 ↗
80. Optical properties of InP from infrared to vacuum ultraviolet studied by spectroscopic ellipsometry10.1016/j.apsusc.2017.01.027 ↗
81. Y. S. Ihn, T. J. Kim, Y. D. Kim, D. E. Aspnes, J. Kossut, Optical properties of Cd1−xMgxTe (x=0.00, 0.23, 0.31, and 0.43) alloy films, Applied Physics Letters, 84 (2004) 693-695.10.1063/1.1639506.10.1063/1.1639506 ↗
82. D. E. Aspnes, A. A. Studna, Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV, Phys. Rev. B, 27 (1983) 985-1009.10.1103/PhysRevB.27.985.10.1103/PhysRevB.27.985 ↗
83. D. E. Aspnes, A. A. Studna, E. Kinsbron, Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV, Phys. Rev. B, 29 (1984) 768-779.10.1103/PhysRevB.29.768.10.1103/PhysRevB.29.768 ↗
84. Cl2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometry10.1116/1.580691 ↗
85. Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction10.1143/JJAP.44.67 ↗
86. Optical Properties of Ion-Implanted Si layeres Studied by Spectroscopic Ellipsometry10.1143/JJAP.33.1931 ↗
87. Spectroscopic Ellipsometry Study of Si Surfaces Modified by Low-Energy Ar + -Ion Irradiation10.1143/JJAP.32.4941 ↗
88. Y. Nakakubo, A. Matsuda, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, K. Ono, Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring, Japanese Journal of Applied Physics, 49 (2010) 08JD02.10.1143/JJAP.49.08JD02.10.1143/JJAP.49.08JD02 ↗
89. H. C. Neitzert, N. Layadi, P. Roca i Cabarrocas, R. Vanderhaghen, M. Kunst, In situ measurements of changes in the structure and in the excess charge‐carrier kinetics at the silicon surface during hydrogen and helium plasma exposure, Journal of Applied Physics, 78 (1995) 1438-1445.10.1063/1.360302.10.1063/1.360302 ↗
90. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation10.1063/1.333785 ↗
91. J. Kim, K. Takeda, H. Itagaki, X.-l. Wang, S. Hirose, H. Ogiso, T. Shimizu, N. Kumagai, T. Tsutsumi, H. Kondo, M. Hori, H. Sakakita, Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures, IEEJ Trans. Electr. Electron. Eng. , (accepted) (2020) 10.1002/tee.23194.10.1002/tee.23194 ↗
92. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells10.1016/j.spmi.2016.06.023 ↗
93. Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth10.1063/1.5001185 ↗
94. Growth and characterization of bulk InGaN films and quantum wells10.1063/1.115806 ↗
95. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry10.1103/PhysRevB.20.3292 ↗
96. D. A. G. Bruggeman, Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen, Annalen der Physik, 416 (1935) 636-664.10.1002/andp.19354160705.10.1002/andp.19354160705 ↗
97. Inc., Guide to Using WVASE spectroscopic ellipsometry Data
98. Effective medium models for the optical properties of inhomogeneous materials10.1364/AO.20.000026 ↗
99. C. M. Herzinger, B. Johs, A Parametric Dielectric Model for Semiconductors suitable for Spectroscopic Ellipsometry Data Analysis, preprint, J. A. Woolam Co., Inc. (2002).
100. Parametric modeling of the dielectric functions of Cd1−xMgxTe alloy films10.1016/j.tsf.2004.01.015 ↗