journal article·2022-06

Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

Jie Liu, Jingwei Li, Lixin Gu, Hong Wu, Guang Han, Dengkui Wang, Jinfei Zhou, Xiangnan Gong, Dingfeng Yang, Sikang Zheng, Daliang Zhang, Bin Zhang, Xiaoyuan Zhou

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (62)

Show source-provided references
1. GaSe, a new effective material for nonlinear optics
2. Past, present and future of GaSe and related crystal-layered materials with outstanding nonlinear optical properties10.3788/OPE.20111902.0260 ↗
3. Doped GaSe crystals for laser frequency conversion10.1038/lsa.2015.135 ↗
4. Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets10.1021/nn405529r ↗
5. Synthesis of few-layer GaSe nanosheets for high performance photodetectors10.1021/nn300889c ↗
6. Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe10.1002/inf2.12160 ↗
7. Progress in pulsed laser deposited two-dimensional layered materials for device applications10.1039/C6TC01602B ↗
8. Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy10.1021/acs.nanolett.5b01058 ↗
9. High thermoelectric performance in two dimensional chalcogenides systems: GaSe and GaTe10.1088/1361-6528/abcef2 ↗
10. Properties of gallium selenide single crystal10.1016/0960-8974(94)90010-8 ↗
11. Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy10.1002/sia.6557 ↗
12. The Study of Optical Properties of III2–VI3 Defect Semiconductor Group Compounds Ga2S3, Ga2Se3, In2S3, and In2Se310.1002/adpr.202000110 ↗
13. Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet10.1063/1.361264 ↗
14. Ga2Se3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties10.1021/acsomega.0c02623 ↗
15. Ga2Se3 thin film as a negative electrode material for lithium-ion batteries10.1149/2.007201eel ↗
16. Investigation of Thermoelectric Power of Ga2Se3 Monocrystals10.1002/crat.2170300626 ↗
17. Effect of vacancy distribution on the thermal conductivity of Ga2Te3 and Ga2Se310.1007/s11664-010-1479-7 ↗
18. Data-driven systematic search of promising photocatalysts for water splitting under visible light10.1021/acs.jpclett.9b01977 ↗
19. Lattice dynamics of tetrahedrally bonded semiconductors containing ordered vacant sites10.1103/PhysRevB.11.3785 ↗
20. Ueber die kristallstrukturen von Ga2S3, Ga2Se3 und Ga2Te310.1002/zaac.19492590111 ↗
21. The Crystal Structure of β-Ga2Se310.1016/0022-4596(82)90250-X ↗
22. Vacancy ordering of Ga2Se3 at GaSe/GaAs(100) interface10.1063/1.122054 ↗
23. First-principles study of the structure and band structure of Ga2Se310.1088/0953-8984/25/22/225503 ↗
24. Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se310.1007/BF02665031 ↗
25. Polarized photoluminescence in vacancy-ordered Ga2Se310.1016/0022-0248(94)90807-9 ↗
26. Zhenping Wu, p-GaSe/n-Ga2O3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity10.1021/acsphotonics.1c00015 ↗
27. Perspectives on photodetectors based on selenides and their van der Waals heterojunctions10.1063/5.0045941 ↗
28. High-Performance, Self-Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction10.1002/adom.201700490 ↗
29. Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions10.1039/C7NR03124F ↗
30. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures10.1088/1361-6528/aa749e ↗
31. Thermodynamic study of AIIIBVI compounds oxidation10.1016/j.mssp.2004.03.002 ↗
32. Oxidation of ultrathin GaSe10.1063/1.4934592 ↗
33. GaSe oxidation in air: from bulk to monolayers10.1088/1361-6641/aa8441 ↗
34. Enhanced electrocatalytic activity in GaSe and InSe nanosheets: the role of surface oxides10.1002/adfm.202005466 ↗
35. Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si (001) substrate10.1016/S0022-0248(01)02353-3 ↗
36. Super Deformability and Thermoelectricity of Bulk γ-InSe Single Crystals10.1088/1674-1056/abf133 ↗
37. Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material10.1063/1.4949011 ↗
38. Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te410.1002/advs.202002051 ↗
39. Pennycook · 2002
40. Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation10.1088/2053-1583/aa61e0 ↗
41. A second amorphous layer underneath surface oxide10.1017/S143192761700006X ↗
42. Dynamic Epitaxial Crystallization of SnSe2 on the Oxidized SnSe Surface and Its Atomistic Mechanisms
43. Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal10.1038/s41563-021-01064-6 ↗
44. Realizing enhanced thermoelectric properties in Cu2S-alloyed SnSe based composites produced via solution synthesis and sintering10.1016/j.jmst.2020.10.062 ↗
45. Melt-spun Sn1−x−ySbxMnyTe with unique multiscale microstructures approaching exceptional average thermoelectric zT10.1016/j.nanoen.2021.105879 ↗
46. Surface oxide removal for polycrystalline SnSe reveals near-single-crystal thermoelectric performance10.1016/j.joule.2019.01.001 ↗
47. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films10.1021/jp311300e ↗
48. Resonant Raman scattering in GaSe10.1103/PhysRevB.10.3464 ↗
49. Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers10.1039/D0FD00007H ↗
50. The Raman enhancement effect on a thin GaSe flake and its thickness dependence10.1039/C5TC02209F ↗
51. Raman study of epitaxial Ga2Se3 films grown by molecular beam epitaxy10.1143/JJAP.31.L186 ↗
52. Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy10.1063/1.4986189 ↗
53. An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films10.1063/1.121002 ↗
54. Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures10.3390/nano10091760 ↗
55. Interference effect on photoluminescence intensity in GaSe up to 200 layers10.1021/acs.jpcc.0c00844 ↗
56. β-Ga2O3 for wide-bandgap electronics and optoelectronics10.1088/1361-6641/aadf78 ↗
57. Synthesis of highly luminescent GaSe nanoparticles10.1021/nl015641m ↗
58. Morphology control of layer-structured gallium selenide nanowires10.1021/nl062047+ ↗
59. Pulsed laser deposition of photoresponsive two-dimensional GaSe nanosheet networks10.1002/adfm.201401440 ↗
60. Progress and perspective of metal phosphide/carbon heterostructure anodes for rechargeable ion batteries10.1039/D1TA01626A ↗
61. CuS concave polyhedral superstructures enabled efficient N2 electroreduction to NH3 at ambient conditions10.1039/D1QI00306B ↗
62. Recent advances in perovskite oxides as electrode materials for supercapacitors10.1039/D0CC07970G ↗