journal article·1991-06

Ambient and low temperature photoluminescence topography of GaAs subtrates, epitaxial and implanted layers

Z.M. Wang, J. Windscheif, D.J. As, W. Jantz

Applied Surface Science· Volume 50· Issue 1-4
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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor materials and devices

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References (10)

Show source-provided references
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2. Windscheif · 1987 · 195
3. Wang · Proc. 17th Int. Symp. on GaAs and Related Compounds, New Jersey · 1990
4. Inst. Phys. Conf. Ser. · 1990 · 112 · 191
5. Krambrock · 1988 · 159
6. Winnacker · 1988 · 583
7. Zach · Jpn. J. Appl. Phys. · 1989 · 28 · 95710.1143/JJAP.28.957 ↗
8. Wagner · Appl. Phys. · 1989 · 65 · 522510.1063/1.343161 ↗
9. Moore · J. Cryst. Growth · 1990 · 103 · 2110.1016/0022-0248(90)90165-H ↗
10. Neumann · 3rd European Workshop on Metalorganic Vapour Phase Epitaxy, Montpellier · 1989