Room temperature ferromagnetism and transport properties in InN/VTe2 van der Waals heterostructures
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: first-principles calculations10.1103/PhysRevB.80.155453 ↗
2. Computational discovery of single-layer III-V materials10.1103/PhysRevB.87.165415 ↗
3. Wafer-sized ultrathin gallium and indium nitride nanosheets through the ammonolysis of liquid metal derived oxides10.1021/jacs.8b11483 ↗
4. M.S. Prete, A.M. Conte, P. Gori, F. Bechstedt, O. Pulci, Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures, Appl. Phys. Lett. 110(1) (2017) 012103.10.1063/1.4973753 ↗
5. Strong in- and out-of-plane excitons in two-dimensional InN nanosheets10.1103/PhysRevB.98.235431 ↗
6. Tunable band gaps of InxGa1–xN alloys: from bulk to two-dimensional limit10.1021/acs.jpcc.7b12401 ↗
7. First-principles study on the electronic and magnetic properties of InN nanosheets doped with 2p elements10.1016/j.physe.2014.10.036 ↗
8. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals10.1038/nature22060 ↗
9. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit10.1038/nature22391 ↗
10. Van der Waals heterostructures10.1038/nature12385 ↗
11. Van der Waals heterostructures and devices10.1038/natrevmats.2016.42 ↗
12. 2D materials and van der Waals heterostructures10.1126/science.aac9439 ↗
13. Layer-resolved magnetic proximity effect in van der Waals heterostructures10.1038/s41565-019-0629-1 ↗
14. Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures10.1038/s41563-020-0791-8 ↗
15. Spin valve effect in VN/GaN/VN van der Waals heterostructures10.1103/PhysRevB.103.035423 ↗
16. Significant enhancement of magnetic anisotropy and conductivity in GaN/CrI3 van der Waals heterostructures via electrostatic doping10.1103/PhysRevB.104.075433 ↗
17. Recent progress on 2D magnets: fundamental mechanism, structural design and modification10.1063/5.0039979 ↗
18. B. Shabbir, M. Nadeem, Z.G. Dai, M.S. Fuhrer, Q.K. Xue, X.L. Wang, Q. L. Bao, Long range intrinsic ferromagnetism in two dimensional materials and dissipationless future technologies, Appl. Phys. Rev. 5(4) (2018) 041105.10.1063/1.5040694 ↗
19. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)10.1038/srep32625 ↗
20. Effects of strain and stacking patterns on the electronic structure, valley polarization and magnetocrystalline anisotropy of layered VTe210.1016/j.apsusc.2020.148098 ↗
21. Quantum size effects in layered VX2 (X = S, Se) materials: manifestation of metal to semimetal or semiconductor transition10.1063/1.4908114 ↗
22. Phase engineering of two-dimensional transition metal dichalcogenides10.1007/s40843-018-9398-1 ↗
23. Electronic structure and magnetism of MTe2 (M = Ti, V, Cr, Mn, Fe, Co and Ni) monolayers10.1016/j.jmmm.2020.166878 ↗
24. Systematic search for two-dimensional ferromagnetic materials10.1103/PhysRevMaterials.2.081001 ↗
25. van der Waals Epitaxial growth of Atomically Thin 2D metals on dangling-bond-free WSe2 and WS210.1002/adfm.201806611 ↗
26. Tunable valley splitting and anomalous valley Hall effect in VTe2/Ga2S3 heterostructures10.1039/D0TC03712E ↗
27. L.V. Begunovich, A.V. Kuklin, M.A. Visotin, A.A. Kuzubov, F.N. Tomilin, A.S. Tarasov, Y.G. Mikhalev, P.V. Avramov, Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions, Appl. Surf. Sci. 510 (2020) 145315.10.1016/j.apsusc.2020.145315 ↗
28. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
29. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
30. S. Grimme, J. Antony, S. Ehrlich, H. Krieg, A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu, J. Chem. Phys. 132 (15) (2010) 154104.10.1063/1.3382344 ↗
31. Hybrid functionals based on a screened Coulomb potential10.1063/1.1564060 ↗
32. BoltzTraP2, a program for interpolating band structures and calculating semi-classical transport coefficients10.1016/j.cpc.2018.05.010 ↗
33. Theoretical prediction of a graphene-like structure of indium nitride: a promising excellent material for optoelectronics10.1016/j.apmt.2017.03.001 ↗
34. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching10.1103/PhysRevB.94.035125 ↗
35. Layered graphene/GaS van der Waals heterostructure: controlling the electronic properties and Schottky barrier by vertical strain10.1063/1.5055616 ↗
36. van der Waals Epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties10.1021/acsnano.6b05521 ↗
37. Type-II InSe/MoSe2(WSe2) van der Waals heterostructures: vertical strain and electric field effects10.1039/C8TC03047B ↗
38. Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: high carrier mobility and broadband performance10.1103/PhysRevB.97.115416 ↗
39. Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures10.1039/C5TC02975A ↗
40. M.M. Obeid, A. Bafekry, S.U. Rehman, C.V. Nguyen, A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility, Appl. Surf. Sci. 534 (2020) 147607.10.1016/j.apsusc.2020.147607 ↗
41. Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers10.1039/C6NH00144K ↗
42. Exploitable magnetic anisotropy of the two-dimensional magnet CrI310.1021/acs.nanolett.9b03815 ↗
43. Stability and magnetism of strongly correlated single-layer VS210.1103/PhysRevB.93.054429 ↗
44. Comparative study on dynamical stability against strain of pristine and chemically functionalized monolayer honeycomb materials10.1007/s10853-017-1851-6 ↗
45. Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer10.1016/j.apsusc.2019.02.171 ↗
46. Efficient band structure tuning, charge separation, and visible-light response in ZrS2-based van der Waals heterostructures10.1039/C5EE03490F ↗
47. Electronic and optical properties of heterostructures based on transition metal dichalcogenides and graphene-like zinc oxide10.1038/s41598-018-30614-3 ↗
48. First-principles theory of surface magnetocrystalline anisotropy and the diatomic-pair model10.1103/PhysRevB.47.14932 ↗
49. Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene10.1039/c1nr10167f ↗
50. Tensile strain switched ferromagnetism in layered NbS2 and NbSe210.1021/nn303198w ↗
51. Gate tuning of electronic phase transitions in two-dimensional NbSe210.1103/PhysRevLett.117.106801 ↗
52. Strain induced large enhancement of thermoelectric figure-of-merit (ZT ∼ 2) in transition metal dichalcogenide monolayers ZrX2 (X = S, Se, Te)10.1063/1.5125191 ↗
53. BoltzTraP. A code for calculating band-structure dependent quantities10.1016/j.cpc.2006.03.007 ↗
54. Biaxial strain tuned thermoelectric properties in monolayer PtSe210.1039/C6TC03074B ↗