Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping
Source abstract
Abstract
The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo is placed at the In site of the indium oxide.
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Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Semiconductor materials and devices
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References (35)
Show source-provided references
1. Hartnagel · 1995
2. High mobility transparent conducting oxides for thin film solar cells10.1016/j.tsf.2009.09.044 ↗
3. Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films10.1016/j.pcrysgrow.2005.10.001 ↗
4. Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target10.1007/s10853-006-0844-7 ↗
5. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering10.1016/j.tsf.2011.08.060 ↗
6. Structural optical and electrical characterization of highly conducting Mo-doped In2O3 thin films10.1016/j.apsusc.2007.12.035 ↗
7. Electronic band structure of indium tin oxide and criteria for transparent conducting behavior10.1103/PhysRevB.64.233111 ↗
8. Magnetically mediated transparent conductors: In2O3 doped with Mo10.1103/PhysRevLett.97.086401 ↗
9. Origin of high mobility in molybdenum-doped indium oxide10.1021/cm503896h ↗
10. High-mobility: sputtered films of indium oxide doped with molybdenum10.1063/1.1687984 ↗
11. Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering10.1116/1.1894423 ↗
12. Preparation of molybdenum-doped indium oxide thin films using reactive direct-current magnetron sputtering10.1557/JMR.2005.0184 ↗
13. High-mobility molybdenum doped indium oxide10.1016/j.tsf.2005.08.314 ↗
14. Effects of postdeposition annealing on electrical properties of Mo-Doped indium oxide (IMO) thin films deposited by RF magnetron cosputtering10.1143/JJAP.45.L1179 ↗
15. Transparent conductive In2O3: Mo thin films prepared by reactive direct current magnetron sputtering at room temperature10.1016/j.tsf.2005.11.012 ↗
16. Preliminary studies on molybdenum-doped indium oxide thin films deposited by radio-frequency magnetron sputtering at room temperature10.1016/j.tsf.2007.01.022 ↗
17. Some studies on highly transparent wide band gap indium molybdenum oxide thin films rf sputtered at room temperature10.1016/j.tsf.2007.03.155 ↗
18. Development of radio-frequency magnetron sputtered indium molybdenum oxide10.1116/1.1586281 ↗
19. Low resistivity indium–tin oxide transparent conductive films. I. Effect of introducing H2O gas or H2 gas during direct current magnetron sputtering
20. Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature10.1016/S0040-6090(00)01418-8 ↗
21. The influence of hydrogen gas in the ambient gas mixture on the properties of indium tin oxide films deposited on glass and acrylic substrates by dc magnetron sputtering10.1088/0022-3727/39/17/020 ↗
22. Enhanced optical and electrical properties of ITO on a PET substrate by hydrogen plasma and HCl treatment10.1088/0022-3727/46/12/125103 ↗
23. Room temperature preparation of indium-tin oxide thin films on transparent flexible substrates10.1016/j.apsusc.2015.03.096 ↗
24. Extraction of the fine structure from X-ray absorption spectra10.1088/0022-3727/34/2/309 ↗
25. X-Ray Absorption Principles, Applications, Techniques of EXAFS, SEXAFS and XANES
26. Real-space multiple-scattering calculation and interpretation of X-ray-absorption near-edge structure10.1103/PhysRevB.58.7565 ↗
27. Theoretical approaches to X-ray absorption fine structure10.1103/RevModPhys.72.621 ↗
28. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape
29. A method of measuring the resistivity and hall coefficient on lamellae of arbitrary shape
30. Refinement of the crystal structure of In2O3 at two wavelengths10.1107/S0365110X66001749 ↗
31. Tauc · 1974
32. Optical properties of indium oxide10.1063/1.1707830 ↗
33. Structural studies of tin-doped indium oxide (ITO) and In4Sn3O1210.1006/jssc.1997.7613 ↗
34. Structural study of tin‐doped indium oxide thin films using X‐ray absorption spectroscopy and X‐ray diffraction II. Tin environment10.1149/1.2069185 ↗
35. Electrical properties and defect model of tin-doped indium oxide layers10.1007/BF00619080 ↗